12-06-2014, 11:21 AM
45nm 8t sram WITH IMPROVED NOISE MARGIN
45nm 8t sram WITH IMPROVED.pptx (Size: 612.18 KB / Downloads: 11)
Primary study
8T SRAM consists of three modes of operation
Standby
Cell supply- Vdd : CS will be low
Read
CS- Vdd :Cell supply-vdd2 [vdd2=1.5vdd]
Write
WL –low :CS- Vdd :Cell Supply - Vdd
Background study
SNM –Static Noise Margin
Definition :- the maximum DC noise required to flip a cell data
Various parameters effect on SNM
SNM is less sensitive in above Vt operations
Vdd noise effects noise SNM
Temperature
Mismatch