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Radiometric and Photometric Quantities
Transmittance and Reflectance
Crawling and Cogging of Induction Motor
Specifications or Rating of Power Capacitor
Switching Algebra or Boolean Algebra
Energy Quanta | Development of Quantum Physics
Wave Particle Duality Principle
Schrodinger Wave Equation and Wave Function
Heisenberg Uncertainty Principle
Electron volt or eV
Quantum Numbers
Work Function
Mobility of Charge Carrier
What are photo electrons?
Diode | Working Principle and Types of Diode
Diode Characteristics
PN Junction Forward and Reverse Bias of P N Junction
p-n Junction Diode and Characteristics of p-n Junction
Half Wave Diode Rectifier
Full Wave Diode Rectifier
P-I-N Photodiode | Avalanche Photo Diode
Tunnel Diode and its Applications
LED or Light Emitting Diode
Zener Diode | Symbol and Application as Voltage Regulator
MOSFET | Working Principle of p-channel n-channel MOSFET
MOSFET Circuits
MOS Capacitor | MOS Capacitance C V Curve
Diode Bridge Rectifier
Theory of Semiconductor
Current Density in Metal and Semiconductor
Energy Bands of Silicon
Intrinsic Silicon and Extrinsic Silicon
Conductivity of Semiconductor
Donor and Acceptor Impurities in Semiconductor
Bipolar Junction Transistor or BJT | N-P-N or P-N-P Transistor Application Theory Biasing Amplifier
Applications of Bipolar Junction Transistor or BJT | History of BJT
Biasing of Bipolar Junction Transistor | BJT or Bipolar Transistor Biasing
JFET or Junction Field Effect Transistor
DIAC
TRIAC
Laser | Types and Components of Laser
Cyclotron Basic Construction and Working Principle
Integrated Circuits | Types of IC
Op-amp | Working Principle of Op-amp
Amplifier Gain | Decibel or dB Gain
Regulated Power Supply
p-n Junction Diode and Characteristics of p-n Junction
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P-N junction diode is the most fundamental and the simplest electronics device. When one side of an intrinsic semiconductor is doped with acceptor i.e, one side is made p-type by doping with n-type material, a p-n junction diode is formed. This is a two terminal device. It appeared in 1950’s.
P-N junction can be step graded or linearly graded. In step graded the concentration of dopants both, in n - side and in p - side are constant up to the junction. But in linearly graded junction, the doping concentration varies almost linearly with the distance from the junction. When the P-N diode is in unbiased condition that is no voltage is applied across it, electrons will defuse through the junction to p - side and holes will defuse through the junction to n - side and they combine with each other. Thus the acceptor atom near the p - side and donor atom near n – side are left unutilized. An electron field is generated by these uncovered charges. This opposes further diffusion of carriers. So, no movement of region is known as space charge or depletion region. If, we apply forwards bias to the p-n junction diode. That means if positive side of the battery is connected to the p – side, then the depletion regions width decreases and carriers flow across the junction. If the bias is reversed the depletion width increases and no charge can flow across the junction.