07-04-2012, 01:10 PM
HIGH AND LOW SIDE DRIVER
datasheet_3.pdf (Size: 210.26 KB / Downloads: 14)
Features
• Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Also available LEAD-FREE
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. Logic inputs are compatible
with standard CMOS or LSTTL output, down to 3.3V logic. The
output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in figures 36 and 37.