24-10-2012, 01:28 PM
High-Temperature Process and Anneal Furnace
ABSTRACT
Researchers at the University of Colorado, have successfully purchased, installed and operated a high temperature anneal
furnace suitable for the annealing of ion-implanted dopants into SiC. Key requirements are the ability to rapidly and
controllably heat the wafers to temperatures in the range of 1300-1700 C. A process for implantation and anneal of shallow,
low-resistance, ptype contact layers was developed in parallel (funded by other projects). The system is therefore ready for
the research and development of state-of-the-art SiC devices.