22-09-2012, 12:29 PM
BiCMOS
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IBM Blue Logic™ BiCMOS 6HP
• IBM Semiconductor 0.18 Micron 7HP SiGe BiCMOS
Process
• MOSIS is offering access to the IBM 0.18 micron SiGe
BiCMOS 7HP technology for prototype and low volume
fabrication. C4 (IBM's flip chip bumping) is available at
an additional cost.
This BiCMOS SiGe process has 5 metal layers and other
options for the standard MPW runs. Other configurations
are available for dedicated runs or on MPW runs at an
additional cost.
To insure that submitted data is on a 20 nm grid, please
stream-out at 1 DBU = 20 nm (Cadence 0.020, not 0.001).
Supply voltages are 1.8 V core and 2.5/3.3 V I/O. For
reference, see the SiGe process comparison.
200 GHz BiCMOS
Jazz Semiconductor (Newport Beach, CA) has announced a
complete design platform in concert with its new 200-GHz SiGe
BiCMOS technology, the SBC18H2 process, which is well suited
for RF, microwave, and millimeter-wave integrated analog and
mixed-signal semiconductor chips. The company has validated key
circuit building blocks for next-generation products, including 60-
GHz wireless data and collision avoidance radars. As a companion
to the 200-GHz SiGe process, the new design environment supports
fully scalable device models for SiGe bipolar and RF CMOS,
statistical simulation with mismatch capabilities, an integrated
inductor design toolbox, and other features that enhance
predictability for first-time manufacturing success.