Graphene has changed from being the exclusive domain of the physicists of the condensed matter to be explored by those in the community of electronic devices. In particular, graphene-based transistors have developed rapidly and are now considered an option for post-silicon electronics. However, many details about the potential performance of graphene transistors in real applications remain unclear. Here I review the properties of graphene that are relevant to electron devices, discuss the trade-offs between these properties, and examine their effects on the performance of graphene transistors in both logic and radiofrequency applications. Conclude that the excellent mobility of graphene can not, as is often assumed, be its most attractive feature from the point of view of the device. Rather, it may be the ability to fabricate devices with extremely thin channels that allow graphene field-effect transistors to be scaled to shorter channel lengths and higher speeds without encountering short-channel adverse effects that constrain the performance of Devices. The outstanding challenges for graphene transistors include opening a large, well-defined bandgap in graphene, making large area graphene transistors that operate at current saturation rate and fabricate graphene nanoribons with well-defined widths and clean edges.