This spin-RAM based FPGA circuitry could safely process information in low-power, high-speed dissipation; In the meantime, all processed data is permanently stored in the distributed spin-RAM memory. In this non-volatile FPGA design, MTJs (magnetic tunnel junction) are used as storage elements. Contrary to conventional MRAM circuits, we do not use a complex sense amplifier, but a simple sense amplifier based on SRAM couples two MTJs per bit. The non-volatility of the spin-RAM allows the dynamic configuration of the FPGA circuits and the starting time of the circuit can decrease to about one hundred peak seconds. As conventional MRAM, the spin-RAM MTJ will be on the semiconductor surface; Therefore the die area of the circuit will not be enlarged by comparing with the conventional FPGA.