30-04-2014, 11:31 AM
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
[attachment=62690]
INTRODUCTION
This N-Channel enhancement mode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.
[attachment=62690]
INTRODUCTION
This N-Channel enhancement mode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.