24-05-2014, 11:44 AM
Sulphide Based Semiconductors– Growth and Characterization of ZnS
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Abstract
Sulphides of transition metals are semiconductor materials with band gaps in the range of 1-2 eV. These find application in optoelectronics and as quantum dots in bio-labeling. We fabricate ZnS based semiconductors by one pot synthesis and characterized by XRD, SEM and tune the band gaps by chemical control through processing conditions for desired applications.
Introduction
In the last few years nanostructured materials have different characteristics than bulk materials. Quantum size and surface effects of nanoparticles can alter their electronic, magnetic properties and these may find many applications. Optical light emission in the blue-red spectral region, make their semiconducting nanostructure suitable for several kinds of applications [1].
Among II-VI group semiconductor materials ZnS, find applications in optoelectronics devices. In past few years II-VI semiconductors nanoparticles, because of their size dependent photo and electro luminescent properties, attract much more [2].
ZnS exhibits two different crystal structures. They are cubic and hexagonal structures. But both the structures have band gap energy of (3.5-3.8 eV). ZnS is used for cathode ray tube, the field’s emission and scintillator. In case of hot electron cold cathode thin films of ZnS can be used as an active emitting material. ZnS can be prepared in the form of thin film, powder, and colloid using different synthesis techniques. These are sputtering, wet chemical, co evaporation, sol-gel, solid state, microscopic radiation, ultrasonic irradiation. In this report we report synthesis of ZnS using a wet chemical method and characterize by XRD, SEM and estimate its band gap.
Results and Discussion
Structural Characterization
X-ray diffraction (XRD) patterns of the ZnS powder is shown in (Figure1). Diffraction peaks can be indexed as zinc sulfide sphalerite type structure (a=5.4250) with cubic structure (space group: F 4- 3m) standard (JCPDS Card No. 200-5214) no detectable impurity phase is observed results show that products are pure phase of ZnS. From the XRD by using Scherer formula average particle size is obtained (5 – 10nm).
Conclusion:
ZnS nanoparticles have been synthesized by one pot synthesis, The structural and optical characterization of product is done by XRD, DRS. XRD shows formation of ZnS nanoparticles with cubic structure having particle size between 20-30 nm. Optical band gap of ZnS is 3.39eV.
[attachment=63645]
Abstract
Sulphides of transition metals are semiconductor materials with band gaps in the range of 1-2 eV. These find application in optoelectronics and as quantum dots in bio-labeling. We fabricate ZnS based semiconductors by one pot synthesis and characterized by XRD, SEM and tune the band gaps by chemical control through processing conditions for desired applications.
Introduction
In the last few years nanostructured materials have different characteristics than bulk materials. Quantum size and surface effects of nanoparticles can alter their electronic, magnetic properties and these may find many applications. Optical light emission in the blue-red spectral region, make their semiconducting nanostructure suitable for several kinds of applications [1].
Among II-VI group semiconductor materials ZnS, find applications in optoelectronics devices. In past few years II-VI semiconductors nanoparticles, because of their size dependent photo and electro luminescent properties, attract much more [2].
ZnS exhibits two different crystal structures. They are cubic and hexagonal structures. But both the structures have band gap energy of (3.5-3.8 eV). ZnS is used for cathode ray tube, the field’s emission and scintillator. In case of hot electron cold cathode thin films of ZnS can be used as an active emitting material. ZnS can be prepared in the form of thin film, powder, and colloid using different synthesis techniques. These are sputtering, wet chemical, co evaporation, sol-gel, solid state, microscopic radiation, ultrasonic irradiation. In this report we report synthesis of ZnS using a wet chemical method and characterize by XRD, SEM and estimate its band gap.
Results and Discussion
Structural Characterization
X-ray diffraction (XRD) patterns of the ZnS powder is shown in (Figure1). Diffraction peaks can be indexed as zinc sulfide sphalerite type structure (a=5.4250) with cubic structure (space group: F 4- 3m) standard (JCPDS Card No. 200-5214) no detectable impurity phase is observed results show that products are pure phase of ZnS. From the XRD by using Scherer formula average particle size is obtained (5 – 10nm).
Conclusion:
ZnS nanoparticles have been synthesized by one pot synthesis, The structural and optical characterization of product is done by XRD, DRS. XRD shows formation of ZnS nanoparticles with cubic structure having particle size between 20-30 nm. Optical band gap of ZnS is 3.39eV.