21-05-2010, 08:56 PM
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INTRODUCTION
Indium antimonide (InSb) shows great promise as an ultra-fast, very low power digital logic technology as it has t he highest electron mobility and saturation velocity of any known semiconductor .This performance can be accessed at room temperature using Extractive (minority carrier exclusion and extraction) technology, which mitigates the effect of the narrow band-gap on device leakage and breakdown. This was earlier
demonstrated in a MISFET device, using an InSb device layer on an InSb substrate with a deposited SiO 2 gate oxide .In this paper, we report on the materials growth, device fabrication and characterization of an InSb channel Quantum well FET, which uses a semi-insulating GaAs substrate, a relaxed metamorphic buffer layer of AlyIn1-ySb to accommodate lattice mismatch, a compressively strained InSb quantum well confined between layers of AlxIn1-xSb and a Schottky barrier metal gate. Careful materials structure design employing a modulation doping scheme achieves 295K electron mobility of over 30,000 cm 2V- 1s-1 with a carrier density of over 11012 cm-2. Devices with gate length of 0.2
INTRODUCTION
Indium antimonide (InSb) shows great promise as an ultra-fast, very low power digital logic technology as it has t he highest electron mobility and saturation velocity of any known semiconductor .This performance can be accessed at room temperature using Extractive (minority carrier exclusion and extraction) technology, which mitigates the effect of the narrow band-gap on device leakage and breakdown. This was earlier
demonstrated in a MISFET device, using an InSb device layer on an InSb substrate with a deposited SiO 2 gate oxide .In this paper, we report on the materials growth, device fabrication and characterization of an InSb channel Quantum well FET, which uses a semi-insulating GaAs substrate, a relaxed metamorphic buffer layer of AlyIn1-ySb to accommodate lattice mismatch, a compressively strained InSb quantum well confined between layers of AlxIn1-xSb and a Schottky barrier metal gate. Careful materials structure design employing a modulation doping scheme achieves 295K electron mobility of over 30,000 cm 2V- 1s-1 with a carrier density of over 11012 cm-2. Devices with gate length of 0.2