12-10-2010, 03:14 PM
[attachment=5724]
OVONIC_UNIFIED_MEMORY
INTRODUCTION
We are now living in a world driven by various electronic equipments. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers. Semi conductors consist of array of transistors with each transistor being a simple switch between electrical 0 and 1. Now often bundled together in there 10’s of millions they form highly complex, intelligent, reliable semiconductor chips, which are small and cheap enough for proliferation into products all around us. Identification of new materials has been, and still is, the primary means in the development of next generation semiconductors. For the past 30 years, relentless scaling of CMOS IC technology to smaller dimensions has enabled the continual introduction of complex microelectronics system functions. However, this trend is not likely to continue indefinitely beyond the semiconductor technology roadmap. As silicon technology approaches its material limit, and as we reach the end of the roadmap, an understanding of emerging research devices will be of foremost importance in the identification of new materials to address the corresponding technological requirements. If scaling is to continue to and below the 65nm node, alternatives to CMOS designs will be needed to provide a path to device scaling beyond the end of the roadmap. However, these emerging research technologies will be faced with an uphill technology challenge. For digital applications, these challengesinclude exponentially increasing the leakage current (gate, channel, and source/drain junctions), short channel effects, etc. while for analogue or RF applications, among the challenges are sustained linearity, low noise figure, power added efficiency and transistor matching. One of the fundamental approaches to manage this challenge is using new materials to build the next generation transistors.
OVONIC_UNIFIED_MEMORY
INTRODUCTION
We are now living in a world driven by various electronic equipments. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers. Semi conductors consist of array of transistors with each transistor being a simple switch between electrical 0 and 1. Now often bundled together in there 10’s of millions they form highly complex, intelligent, reliable semiconductor chips, which are small and cheap enough for proliferation into products all around us. Identification of new materials has been, and still is, the primary means in the development of next generation semiconductors. For the past 30 years, relentless scaling of CMOS IC technology to smaller dimensions has enabled the continual introduction of complex microelectronics system functions. However, this trend is not likely to continue indefinitely beyond the semiconductor technology roadmap. As silicon technology approaches its material limit, and as we reach the end of the roadmap, an understanding of emerging research devices will be of foremost importance in the identification of new materials to address the corresponding technological requirements. If scaling is to continue to and below the 65nm node, alternatives to CMOS designs will be needed to provide a path to device scaling beyond the end of the roadmap. However, these emerging research technologies will be faced with an uphill technology challenge. For digital applications, these challengesinclude exponentially increasing the leakage current (gate, channel, and source/drain junctions), short channel effects, etc. while for analogue or RF applications, among the challenges are sustained linearity, low noise figure, power added efficiency and transistor matching. One of the fundamental approaches to manage this challenge is using new materials to build the next generation transistors.