13-10-2010, 11:56 AM
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Assessment of SET Logic Robustness Through Noise Margin Modeling
Chaitanya Sathe, Surya Shankar Dan, and Santanu Mahapatra, Member, IEEE
Abstract—
A compact model for noise margin (NM) of single electron transistor (SET) logic is developed, which is a function of device capacitances and background charge (ζ). Noise margin is, then, used as a metric to evaluate the robustness of SET logic against background charge, temperature, and variation of SET gate and tunnel junction capacitances (CG and CT ). It is shown that choosing α = CT /CG = 1/3maximizes the NM. An estimate of the maximum tolerable ζ is shown to be equal to±0.03e. Finally, the effect of mismatch in device parameters on the NM is studied through exhaustive simulations, which indicates that ∈ [0.3, 0.4] provides maximum robustness. It is also observed that mismatch can have a significant impact on static power dissipation. Index Terms—Background charge, compact model, Coulomb blockade, noise margin (NM), single-electron transistor (SET).
Assessment of SET Logic Robustness Through Noise Margin Modeling
Chaitanya Sathe, Surya Shankar Dan, and Santanu Mahapatra, Member, IEEE
Abstract—
A compact model for noise margin (NM) of single electron transistor (SET) logic is developed, which is a function of device capacitances and background charge (ζ). Noise margin is, then, used as a metric to evaluate the robustness of SET logic against background charge, temperature, and variation of SET gate and tunnel junction capacitances (CG and CT ). It is shown that choosing α = CT /CG = 1/3maximizes the NM. An estimate of the maximum tolerable ζ is shown to be equal to±0.03e. Finally, the effect of mismatch in device parameters on the NM is studied through exhaustive simulations, which indicates that ∈ [0.3, 0.4] provides maximum robustness. It is also observed that mismatch can have a significant impact on static power dissipation. Index Terms—Background charge, compact model, Coulomb blockade, noise margin (NM), single-electron transistor (SET).