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Full Version: Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine
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Abstract

Power electronics is an enabling technology found in most renewable energy generation systems. Because of its superior voltage blocking capabilities and fast switching speeds, silicon carbide (SiC) power electronics are considered for use in power conversion units in wind generation systems in this paper. The potential efficiency gains from the use of SiC devices in a wind generation system are explored by simulations, with the system modeling explained in detail. The performance of the SiC converter is analyzed and compared to its silicon counterpart at different wind speeds, temperatures, and switching frequencies. The quantitative results are based on SiC metal–oxide–semiconductor field-effect transistor (MOSFET) prototypes from Cree and modern Si insulated-gate bipolar transistor (IGBT) products. A conclusion is drawn that the SiC converters can improve the wind system power conversion efficiency and can reduce the system’s size and cost due to the low-loss, high-frequency, and high-temperature properties of SiC devices, even for one-for-one replacement for Si devices.

INTRODUCTION

VARIABLE speed capability allows a wind turbine to operate at speeds which produce the greatest amount of power and minimizes torque perturbations in the drive train . This capability tends to decrease the overall cost of energy because the amount of energy generated is increased and the cost of the drive train and its maintenance are reduced. Since the voltage and frequency of the generated power vary with the turbine speed, a converter is required to reconcile the output with the fixed voltage and frequency of the grid .Several technical and market reports have recognized silicon carbide (SiC) power electronics as a potential technology for wind turbine power converters. The primary benefits of SiC-based power devices include low losses, high temperature tolerance, and fast switching.