12-01-2012, 02:36 PM
BiCMOS simple explanation
[attachment=16026]
INTRODUCTION
In integrated technologies, BiCMOS, also called BiMOS It is the integration of BJT and CMOS technology into a single device.
In the 1990s modern integrated circuit technologies began to make BICMOS a reality.
BICMOS Circuit uses the characteristics of each type of transistor most appropriately.
Generally this means that high current circuit use metal oxide semiconductor field effect transistor (MOSFETs) for efficient control & portions of specialized very high performance circuits use bipolar devices.
BiCMOS Process Flow
This is the diagram before applying the antimony.
We start up with a lightly doped P-type wafer and form the buried N+ layer by ion implantation of antimony in to the mask.
After a high temperature is performed to remove the damage defects and to diffuse the antimony into the substrate.
During this oxide is grown in the buried N+ region.
To achieve the break down between two buried N+ self aligned punch through implant is performed.
So, the nitride mask is removed oxide behave as the mask of it.
Advantages
It has low current consumption.
Less power dissipation.
Smaller noise margins.
High switching.
Applications
Used as amplifier.
Used in discrete component logic design.
Used in power electronics device like voltage regulator.
Used in analog power management circuit
[attachment=16026]
INTRODUCTION
In integrated technologies, BiCMOS, also called BiMOS It is the integration of BJT and CMOS technology into a single device.
In the 1990s modern integrated circuit technologies began to make BICMOS a reality.
BICMOS Circuit uses the characteristics of each type of transistor most appropriately.
Generally this means that high current circuit use metal oxide semiconductor field effect transistor (MOSFETs) for efficient control & portions of specialized very high performance circuits use bipolar devices.
BiCMOS Process Flow
This is the diagram before applying the antimony.
We start up with a lightly doped P-type wafer and form the buried N+ layer by ion implantation of antimony in to the mask.
After a high temperature is performed to remove the damage defects and to diffuse the antimony into the substrate.
During this oxide is grown in the buried N+ region.
To achieve the break down between two buried N+ self aligned punch through implant is performed.
So, the nitride mask is removed oxide behave as the mask of it.
Advantages
It has low current consumption.
Less power dissipation.
Smaller noise margins.
High switching.
Applications
Used as amplifier.
Used in discrete component logic design.
Used in power electronics device like voltage regulator.
Used in analog power management circuit