09-05-2012, 03:46 PM
Graphene Nanomaterial-A New technology replacing Silicon
[attachment=21699]
. INTRODUCTION
Graphene, which is a monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, has been experimentally demonstrated to possess remarkable carrier transport properties .The high mobility and carrier velocity of graphene promises ballistic devices and high switching speeds. Graphene also offers ultrathin body for optimum electrostatic scaling and excellent thermal conductivity. The potential to produce wafer-scale graphene films with full planar processing for
devices promises high integration potential with conventional CMOS fabrication processes, which is
a significant advantage over carbon nanotubes. Two-dimensional graphene is a semi-metal without a band-gap.A band-gap can be obtained by using narrow graphene nanoribbons (GNR). Unlike carbon nanotubes (CNTs), which are mixtures of metallic and semiconducting materials, a recent experiment demonstrated that all sub-10nm GNRs are semiconducting due to the edge effect, which make them more attractive for electronic devices..
GRAPHENE NANORIBBONS
Graphene nanoribbons (GNRs) are materials with properties distinct from those of other carbon allotropes. The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics. Currently, making GNRs using lithographic, chemical or sonochemical methods is challenging. Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration. GNRs can be fabricated by a more controlled process.
Applications Of Nanoribbons:
Graphene could out-perform copper or use as on-chip interconnects - tiny wires that are used to connect transistors and other devices on integrated circuits. Use of graphene for these interconnects could help extend the long run of performance improvements for silicon-based integrated circuit technology. Their 2D structure has, high electrical and thermal conductivity, and low noise.
CONSTRUCTION OF GRAPHENE TRANSISTOR
Compared to the temperatures of 800-1000°C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650°C, thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures.
[attachment=21699]
. INTRODUCTION
Graphene, which is a monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, has been experimentally demonstrated to possess remarkable carrier transport properties .The high mobility and carrier velocity of graphene promises ballistic devices and high switching speeds. Graphene also offers ultrathin body for optimum electrostatic scaling and excellent thermal conductivity. The potential to produce wafer-scale graphene films with full planar processing for
devices promises high integration potential with conventional CMOS fabrication processes, which is
a significant advantage over carbon nanotubes. Two-dimensional graphene is a semi-metal without a band-gap.A band-gap can be obtained by using narrow graphene nanoribbons (GNR). Unlike carbon nanotubes (CNTs), which are mixtures of metallic and semiconducting materials, a recent experiment demonstrated that all sub-10nm GNRs are semiconducting due to the edge effect, which make them more attractive for electronic devices..
GRAPHENE NANORIBBONS
Graphene nanoribbons (GNRs) are materials with properties distinct from those of other carbon allotropes. The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics. Currently, making GNRs using lithographic, chemical or sonochemical methods is challenging. Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration. GNRs can be fabricated by a more controlled process.
Applications Of Nanoribbons:
Graphene could out-perform copper or use as on-chip interconnects - tiny wires that are used to connect transistors and other devices on integrated circuits. Use of graphene for these interconnects could help extend the long run of performance improvements for silicon-based integrated circuit technology. Their 2D structure has, high electrical and thermal conductivity, and low noise.
CONSTRUCTION OF GRAPHENE TRANSISTOR
Compared to the temperatures of 800-1000°C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650°C, thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures.