29-05-2012, 03:18 PM
CMOS Technology
[attachment=23366]
Basic Fabrication Steps
Growing silicon dioxide to serve as an insulator
between layers deposited on the surface of the
silicon wafer.
Doping the silicon substrate with acceptor and
donor atoms to create p- and n-type diffusions
that form isolating PN junctions and one plate of
the MOS capacitor.
Depositing material on the wafer to create
masks, wires and the other plate of the MOS
capacitor.
Etching deposited materials to create the
appropriate geometric patterns.
Sources of manufacturing problems
Line registration errors
resist exposure and development
over/under etching, lateral diffusion
uneven topography
[attachment=23366]
Basic Fabrication Steps
Growing silicon dioxide to serve as an insulator
between layers deposited on the surface of the
silicon wafer.
Doping the silicon substrate with acceptor and
donor atoms to create p- and n-type diffusions
that form isolating PN junctions and one plate of
the MOS capacitor.
Depositing material on the wafer to create
masks, wires and the other plate of the MOS
capacitor.
Etching deposited materials to create the
appropriate geometric patterns.
Sources of manufacturing problems
Line registration errors
resist exposure and development
over/under etching, lateral diffusion
uneven topography