24-07-2012, 11:36 AM
INTEGRATED MICROCHANNEL COOLING SYSTEM FOR THREE DIMENSIONAL ELECTRONIC CIRCUIT ARCHITECTURES
[attachment=28627]
3D ELECTRONIC CIRCUITS
FIRST DISCUSSD BY JAMES EARLY OF BELL LABORATRIES
IT IS 3D STACKING OF ELECTRIC COMPONENTS
HEAT REMOVAL IS THE PRIMARY CHALLENGE IN IMPLIMENTATION
WHY 3D CIRCUITS?
ALLOWS INTEGRATION OF LOGIC WITH MEMMORY, RF DEVICES ETC. IN A SINGLE CHIP
REDUCE COMMUNICATION DELAY BETWEEN MODULES
REDUCE INTERCONNECTION LENGTH
IMPROVED RELIABILITY
Methods for forming microchannels with 3d circuit
PLASMA ETCHING PRIOR TO WAFER BONDING
SACRIFICIAL SILICON CHANNELS
CHEMICAL ETCHING
MOST PROMISING NEARTERM TECHNIQUES:WAFER BONDING, SILICON EPITAXIAL GROWTH, AND RECRYSTALLIZATION OF POLYSILICON
RECENT RESEARCH:ETCHING VERTICAL CHANNELS THROUGH WAFERS FOR ELECTRICAL CONNECTIONS, WHICH CAN BE LEVERAGED TO PROVIDE THE VERTICAL FLUIDIC CONNECTIONS NEEDED IN THIS RESEARCH
CONCLUSION
MANAGE HIGH POWER DISSIPATION NEAR OUTLET
KEEP MAXIMUM JUNCTION TEMPRATURE LESS THAN 85°C
MORE UNIFORM JUNCTION TEMPRATURE ACHIVED
MAXIMUM TEMPRATURE DIFFRENCE BETWEEN ADJACENT LAYERS REDUCED FROM 15°C TO 1.5°C
[attachment=28627]
3D ELECTRONIC CIRCUITS
FIRST DISCUSSD BY JAMES EARLY OF BELL LABORATRIES
IT IS 3D STACKING OF ELECTRIC COMPONENTS
HEAT REMOVAL IS THE PRIMARY CHALLENGE IN IMPLIMENTATION
WHY 3D CIRCUITS?
ALLOWS INTEGRATION OF LOGIC WITH MEMMORY, RF DEVICES ETC. IN A SINGLE CHIP
REDUCE COMMUNICATION DELAY BETWEEN MODULES
REDUCE INTERCONNECTION LENGTH
IMPROVED RELIABILITY
Methods for forming microchannels with 3d circuit
PLASMA ETCHING PRIOR TO WAFER BONDING
SACRIFICIAL SILICON CHANNELS
CHEMICAL ETCHING
MOST PROMISING NEARTERM TECHNIQUES:WAFER BONDING, SILICON EPITAXIAL GROWTH, AND RECRYSTALLIZATION OF POLYSILICON
RECENT RESEARCH:ETCHING VERTICAL CHANNELS THROUGH WAFERS FOR ELECTRICAL CONNECTIONS, WHICH CAN BE LEVERAGED TO PROVIDE THE VERTICAL FLUIDIC CONNECTIONS NEEDED IN THIS RESEARCH
CONCLUSION
MANAGE HIGH POWER DISSIPATION NEAR OUTLET
KEEP MAXIMUM JUNCTION TEMPRATURE LESS THAN 85°C
MORE UNIFORM JUNCTION TEMPRATURE ACHIVED
MAXIMUM TEMPRATURE DIFFRENCE BETWEEN ADJACENT LAYERS REDUCED FROM 15°C TO 1.5°C