Seminar Topics & Project Ideas On Computer Science Electronics Electrical Mechanical Engineering Civil MBA Medicine Nursing Science Physics Mathematics Chemistry ppt pdf doc presentation downloads and Abstract

Full Version: Power Electronics Devices PPT
You're currently viewing a stripped down version of our content. View the full version with proper formatting.
Power Electronics Devices


[attachment=34403]

Introduction to Power Electronic Devices

1) The concept and features
2) Configuration of systems using power electronic devices
3) Classifications

The concept and features

Concept:

Power electronic devices are the electronic devices that can be directly used in the power processing circuits to convert or control electric power.
In broad sense ,
1) Vacuum devices : Mercury arc rectifier、 thyratron etc.
2) Semiconductor devices: Major material ——Silicon

Very often ,
Power electronic devices = Power semiconductor devices

Features:

The electronic power that power electronic device deals
with is usually much larger than that the information
electronic device does.
Usually working in switching states to reduce power losses.
Need to be controlled by information electronic circuits.
Dissipated power loss usually larger than information
electronic devices ——special packaging and heat sink
are necessary.

History and applications of power diode

Applied in industries starting 1950s
Still in- use today. Usually working with controlled devices as necessary components
In many circumstances fast recovery diodes or schottky diodes have to be used instead of general purpose diodes.

Thyristors

Another name: SCR——silicon controlled rectifier
Thyristor opened the power electronics era
-1956, invention, Bell Laboratories
- 1957, development of the 1st product, GE
- 1958, 1st commercialized product, GE
- Thyristor replaced vacuum devices in almost every power
processing area.
Still in use in high power situation. Thyristor till has the
highest power- handling capability.

Power electronics is the application of solid state electronics for the control and conversion of electric power. The first high-powered electronic devices were mercury arc valves. In modern systems the conversion is performed with semiconductor switching devices such as diodes, thyristors and transistors, initiated by R. D. Middle-brook and others since the 1950s. Unlike electronic systems related to the transmission and processing of signals and data, substantial quantities of electrical energy are processed in power electronics. An AC / DC converter (rectifier) ​​is the most typical electronic power device found in many consumer electronic devices, televisions, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry a common application is the speed variator (VSD) that is used to control an induction motor. The power range of the VSDs starts from a few hundred watts and ends up in tens of megawatts.

Power conversion systems can be classified according to the type of input and output power
• AC to DC (rectifier)
• DC to AC (inverter)
• DC to DC (DC-DC converter)
• AC to AC (AC to AC converter)

Power electronics began with the development of mercury arc rectifier. Invented by Peter Cooper Hewitt in 1902, it was used to convert alternating current (AC) to direct current (DC). From the 1920s, research continued to apply thyratrons and grid-controlled mercury arc valves to power transmission. One Lamm developed a mercury valve with rating electrodes that make them suitable for high voltage direct current transmission. In 1933 selenium rectifiers were invented.

In 1947, the bipolar point-contact transistor was invented by Walter H. Brattain and John Bardeen under the direction of William Shockley at Bell Labs. In 1948, Shockley's invention of the bipolar junction transistor (BJT) improved stability and performance of transistors, and reduced costs. In the 1950s, higher-power semiconductor diodes were available and began to replace vacuum tubes. In 1956, the silicon-controlled rectifier (SCR) was introduced by General Electric, greatly increasing the range of power electronics applications.

In the 1960s, the improved switching speed of bipolar junction transistors had enabled high-frequency DC / DC converters. In 1976 power MOSFETs became commercially available. In 1982 the insulated gate bipolar transistor (IGBT) was introduced.