09-10-2012, 02:51 PM
Optimization of the Czochralski silicon growth process by means of configured magnetic fields
[attachment=35795]
Numerical modeling goals
Prediction of :
crystal and melt temperature evolution
solid-liquid interface shape
melt flow
residual stresses
dopant and impurity concentrations
defects and dislocations
Principal aspects of the problem
Coupled, global
interaction between heat transfer in crystal and melt, solidification front deformation and overall radiation transfer
Non-linear
physics of radiation, melt convection and solidification
Dynamic
critical growth stages: seeding, shouldering, tail- end, crystal detachment, post-growth
Inverse
natural output is prescribed (crystal shape), while natural input is calculated (heater power or pull rate)
Typical flow pattern
Melt convection is due to
Buoyancy (1)
Forced convection - Coriolis (2)
- Centrifugal pumping (3)
Marangoni effect (4)
Gas flow (5)
[attachment=35795]
Numerical modeling goals
Prediction of :
crystal and melt temperature evolution
solid-liquid interface shape
melt flow
residual stresses
dopant and impurity concentrations
defects and dislocations
Principal aspects of the problem
Coupled, global
interaction between heat transfer in crystal and melt, solidification front deformation and overall radiation transfer
Non-linear
physics of radiation, melt convection and solidification
Dynamic
critical growth stages: seeding, shouldering, tail- end, crystal detachment, post-growth
Inverse
natural output is prescribed (crystal shape), while natural input is calculated (heater power or pull rate)
Typical flow pattern
Melt convection is due to
Buoyancy (1)
Forced convection - Coriolis (2)
- Centrifugal pumping (3)
Marangoni effect (4)
Gas flow (5)