24-10-2012, 11:12 AM
Selective Control of Chemical Reactions with Plasmas. Period Covered: August 15, 2000 to January 31, 2004
ABSTRACT
OAK-B135 This research work focused on control of the reactive species inside a plasma through measurement and
manipulation of the electron energy distribution function (EEDF) and on understanding the surface reaction mechanisms on
the substrate exposed to a combination of ion and atom beam sources to simulate a real plasma. A GEC chamber (Gaseous
Electronic Conference Reference Cell)8 with a mass spectrometer and a Langmuir probe (LP) system were used for this
research. It was found that H2 and N2 additives to an Ar plasma could effectively change the EEDF and the average electron
temperature (Te). This finding provides the possibility to selectively control reaction rates in the plasma to control etching
selectivity on a surface. This concept was demonstrated in Ar/N2/H2 and Ar/CH4 /H2 systems.
ABSTRACT
OAK-B135 This research work focused on control of the reactive species inside a plasma through measurement and
manipulation of the electron energy distribution function (EEDF) and on understanding the surface reaction mechanisms on
the substrate exposed to a combination of ion and atom beam sources to simulate a real plasma. A GEC chamber (Gaseous
Electronic Conference Reference Cell)8 with a mass spectrometer and a Langmuir probe (LP) system were used for this
research. It was found that H2 and N2 additives to an Ar plasma could effectively change the EEDF and the average electron
temperature (Te). This finding provides the possibility to selectively control reaction rates in the plasma to control etching
selectivity on a surface. This concept was demonstrated in Ar/N2/H2 and Ar/CH4 /H2 systems.