27-10-2012, 12:19 PM
Arsenic Pressure Dependence of Carrier Lifetime and Anneal Dynamics of Low-temperature Grown GaAs Studied by Using Pump-probe Spectroscopy
ABSTRACT
We performed pump-probe spectroscopy to measure the carrier lifetime of low-temperature grown (LT-) GaAs.We found
that a sample grown under a high arsenic pressure during crystal growth and annealed at high temperature has a short carrier
lifetime. Annealing time dependence of the pseudo-activation energy obtained from the Arrhenius plot of the carrier decay rate
vs. annealing temperature is useful for determining the annealing dynamics of LT-GaAs.
ABSTRACT
We performed pump-probe spectroscopy to measure the carrier lifetime of low-temperature grown (LT-) GaAs.We found
that a sample grown under a high arsenic pressure during crystal growth and annealed at high temperature has a short carrier
lifetime. Annealing time dependence of the pseudo-activation energy obtained from the Arrhenius plot of the carrier decay rate
vs. annealing temperature is useful for determining the annealing dynamics of LT-GaAs.