10-12-2012, 01:33 PM
TRANSPARENT ELECTRONICS
[attachment=43219]
INTRODUCTION
INVISIBLE ELECTRONICS
TRANSPARENT CONDUCTING OXIDE (TCO)
(In2O3, SnO2, CdO, ZnO )
DRAMATICAL CHANGE IN THE LOOK AND USE
OF ELECTRONIC DEVICES
FACTORS CAUSING ADVERSE EFFECT
INTER-BAND AND INTRA- BAND TRANSITIONS
PLASMA OSCILLATIONS
IONIZED IMPURITY SCATTERING
ELECTRICAL PROPERTIES OF TCO
SIMILAR CHEMICAL, STRUCTURAL AND ELECTRONIC PROPERTIES
POST TRANSITION METALS
INTERACTION BETWEEN THE S ORBIT OF METALS AND P ORBIT OF OXYGEN
SUBSTITUTIONAL DOPING
DOPING WITH ALIOVALENT IONS
DOPING WITH GROUP III, IV AND VII ELEMENTS
ELECTRON VELOCITY AND DENSITY AT FERMI LEVEL RESULT IN THE TREND
TRANSPARENT ELECTRONIC DEVICES
SELECTION, DESIGN, SIMULATION, FABRICATION, INTEGRATION, CHARACTERIZATION AND OPTIMIZATION
PASSIVE, LINEAR DEVICES
TWO TERMINAL ELECTRONIC DEVICES
TRANSPARNT THIN-FILM TRANSISTORS (TTFTs)
CONCLUSION AND REMARKS
GREAT IMPACT ON HUMAN MACHINE INTERACTION
LEAD TO NEW APPLICATIONS
CAUSE ENVIORNMENTAL CHALLENGES AS CURRENTLY USING EC DEVICE
[attachment=43219]
INTRODUCTION
INVISIBLE ELECTRONICS
TRANSPARENT CONDUCTING OXIDE (TCO)
(In2O3, SnO2, CdO, ZnO )
DRAMATICAL CHANGE IN THE LOOK AND USE
OF ELECTRONIC DEVICES
FACTORS CAUSING ADVERSE EFFECT
INTER-BAND AND INTRA- BAND TRANSITIONS
PLASMA OSCILLATIONS
IONIZED IMPURITY SCATTERING
ELECTRICAL PROPERTIES OF TCO
SIMILAR CHEMICAL, STRUCTURAL AND ELECTRONIC PROPERTIES
POST TRANSITION METALS
INTERACTION BETWEEN THE S ORBIT OF METALS AND P ORBIT OF OXYGEN
SUBSTITUTIONAL DOPING
DOPING WITH ALIOVALENT IONS
DOPING WITH GROUP III, IV AND VII ELEMENTS
ELECTRON VELOCITY AND DENSITY AT FERMI LEVEL RESULT IN THE TREND
TRANSPARENT ELECTRONIC DEVICES
SELECTION, DESIGN, SIMULATION, FABRICATION, INTEGRATION, CHARACTERIZATION AND OPTIMIZATION
PASSIVE, LINEAR DEVICES
TWO TERMINAL ELECTRONIC DEVICES
TRANSPARNT THIN-FILM TRANSISTORS (TTFTs)
CONCLUSION AND REMARKS
GREAT IMPACT ON HUMAN MACHINE INTERACTION
LEAD TO NEW APPLICATIONS
CAUSE ENVIORNMENTAL CHALLENGES AS CURRENTLY USING EC DEVICE