27-12-2012, 01:53 PM
Supporting Information
[attachment=45414]
MACE processing with Au catalyst mask. The increase in the colloidal etch time (from A to D) dictates the results in
decrease of the catalytic hole mask size
decrease in the diameter of the Si-nanowires. Three direct benefits follow:
(i) lower gravimetric electrode loading,
(ii) higher polymer/electrolyte uptake,
(iii) easier volume expansion/mechanical stress accommodation during the lithiation/delithiation of Si-nanowires. Nanowires as small as 20 nm in diameter
have been fabricated using this method.
Polymer infiltration. (A) The polymer infiltration was performed with a 5%polymer by wt. solution in acetone. Conformal coating of the Si nanowires
failed when simply adding and drying an excess polymer solution. A continuous polymer film formed on top of the substrate without infiltrating the nanowires
presumably due to a fast evaporation rate of the solvent within the high surface area Si nanowire forest. (B, C) Enlarged views evidencing the poor quality of
the polymer infiltrated Si-nanowire array.
[attachment=45414]
MACE processing with Au catalyst mask. The increase in the colloidal etch time (from A to D) dictates the results in
decrease of the catalytic hole mask size
decrease in the diameter of the Si-nanowires. Three direct benefits follow:
(i) lower gravimetric electrode loading,
(ii) higher polymer/electrolyte uptake,
(iii) easier volume expansion/mechanical stress accommodation during the lithiation/delithiation of Si-nanowires. Nanowires as small as 20 nm in diameter
have been fabricated using this method.
Polymer infiltration. (A) The polymer infiltration was performed with a 5%polymer by wt. solution in acetone. Conformal coating of the Si nanowires
failed when simply adding and drying an excess polymer solution. A continuous polymer film formed on top of the substrate without infiltrating the nanowires
presumably due to a fast evaporation rate of the solvent within the high surface area Si nanowire forest. (B, C) Enlarged views evidencing the poor quality of
the polymer infiltrated Si-nanowire array.