17-01-2013, 12:12 PM
MOSFET
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INTRODUCTION
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first patented by Julius Edgar Lilienfeld in 1925. Twenty five years later, when Bell Telephone attempted to patent the junction transistor, they found Lilienfeld already holding a patent which was worded in a way that would include all types of transistors. Bell Labs was able to work out an agreement with Lilienfeld, who was still alive at that time. (It is not known if they paid him money or not.) It was at that time the Bell Labs version was given the name bipolar junction transistor, or simply junction transistor, and Lilienfeld's design took the name field effect transistor.
In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.
The 'metal' in the name is now often a misnomer because the previously metal gate material is now often a layer of polysilicon (polycrystalline silicon). Aluminium had been the gate material until the mid 1970s, when polysilicon became dominant, due to its capability to form self-aligned gates. Metallic gates are regaining popularity, since it is difficult to increase the speed of operation of transistors without metal gates.
An insulated-gate field-effect transistor or IGFET is a related term almost synonymous with MOSFET. The term may be more inclusive, since many "MOSFETs" use a gate that is not metal, and a gate insulator that is not oxide. Another synonym is MISFET for metal–insulator–semiconductor FET.
Circuit symbols
A variety of symbols are used for the MOSFET. The basic design is generally a line for the channel with the source and drain leaving it at right angles and then bending back at right angles into the same direction as the channel. Sometimes three line segments are used for enhancement mode and a solid line for depletion mode. Another line is drawn parallel to the channel for the gate.
The bulk connection, if shown, is shown connected to the back of the channel with an arrow indicating PMOS or NMOS. Arrows always point from P to N, so an NMOS (N-channel in P-well or P-substrate) has the arrow pointing in (from the bulk to the channel). If the bulk is connected to the source (as is generally the case with discrete devices) it is sometimes angled to meet up with the source leaving the transistor. If the bulk is not shown (as is often the case in IC design as they are generally common bulk) an inversion symbol is sometimes used to indicate PMOS, alternatively an arrow on the source may be used in the same way as for bipolar transistors (out for nMOS, in for pMOS).
Comparison of enhancement-mode and depletion-mode MOSFET symbols, along with JFET symbols (drawn with source and drain ordered such that higher voltages appear higher on the page than lower voltages):
Metal–oxide–semiconductor structure
A traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor, with one of the electrodes replaced by a semiconductor.
When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. If we consider a p-type semiconductor (with NA the density of acceptors, p the density of holes; p = NA in neutral bulk), a positive voltage, VGB, from gate to body (see figure) creates a depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions (see doping (semiconductor)). If VGB is high enough, a high concentration of negative charge carriers forms in an inversion layer located in a thin layer next to the interface between the semiconductor and the insulator. Unlike the MOSFET, where the inversion layer electrons are supplied rapidly from the source/drain electrodes, in the MOS capacitor they are produced much more slowly by thermal generation through carrier generation and recombination centers in the depletion region. Conventionally, the gate voltage at which the volume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage.
[attachment=47309]
INTRODUCTION
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first patented by Julius Edgar Lilienfeld in 1925. Twenty five years later, when Bell Telephone attempted to patent the junction transistor, they found Lilienfeld already holding a patent which was worded in a way that would include all types of transistors. Bell Labs was able to work out an agreement with Lilienfeld, who was still alive at that time. (It is not known if they paid him money or not.) It was at that time the Bell Labs version was given the name bipolar junction transistor, or simply junction transistor, and Lilienfeld's design took the name field effect transistor.
In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.
The 'metal' in the name is now often a misnomer because the previously metal gate material is now often a layer of polysilicon (polycrystalline silicon). Aluminium had been the gate material until the mid 1970s, when polysilicon became dominant, due to its capability to form self-aligned gates. Metallic gates are regaining popularity, since it is difficult to increase the speed of operation of transistors without metal gates.
An insulated-gate field-effect transistor or IGFET is a related term almost synonymous with MOSFET. The term may be more inclusive, since many "MOSFETs" use a gate that is not metal, and a gate insulator that is not oxide. Another synonym is MISFET for metal–insulator–semiconductor FET.
Circuit symbols
A variety of symbols are used for the MOSFET. The basic design is generally a line for the channel with the source and drain leaving it at right angles and then bending back at right angles into the same direction as the channel. Sometimes three line segments are used for enhancement mode and a solid line for depletion mode. Another line is drawn parallel to the channel for the gate.
The bulk connection, if shown, is shown connected to the back of the channel with an arrow indicating PMOS or NMOS. Arrows always point from P to N, so an NMOS (N-channel in P-well or P-substrate) has the arrow pointing in (from the bulk to the channel). If the bulk is connected to the source (as is generally the case with discrete devices) it is sometimes angled to meet up with the source leaving the transistor. If the bulk is not shown (as is often the case in IC design as they are generally common bulk) an inversion symbol is sometimes used to indicate PMOS, alternatively an arrow on the source may be used in the same way as for bipolar transistors (out for nMOS, in for pMOS).
Comparison of enhancement-mode and depletion-mode MOSFET symbols, along with JFET symbols (drawn with source and drain ordered such that higher voltages appear higher on the page than lower voltages):
Metal–oxide–semiconductor structure
A traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor, with one of the electrodes replaced by a semiconductor.
When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. If we consider a p-type semiconductor (with NA the density of acceptors, p the density of holes; p = NA in neutral bulk), a positive voltage, VGB, from gate to body (see figure) creates a depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions (see doping (semiconductor)). If VGB is high enough, a high concentration of negative charge carriers forms in an inversion layer located in a thin layer next to the interface between the semiconductor and the insulator. Unlike the MOSFET, where the inversion layer electrons are supplied rapidly from the source/drain electrodes, in the MOS capacitor they are produced much more slowly by thermal generation through carrier generation and recombination centers in the depletion region. Conventionally, the gate voltage at which the volume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage.