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MOSFET TECHNOLOGY

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MOS TRANSISTOR

MOS transistor consists of semiconductor material (silicon) on which is grown a thin layer (1...50 nm) of insulating oxide, topped by a gate electrode
The gate electrode was originally metal, specifically aluminium, but is now more commonly a layer of polycrystalline silicon (referred to as polysilicon)
Source and drain pn-junctions are formed with a small overlap with the gate

STRUCTURE

A top view of MOSFET, where the gate length, L, and gate width, W.
Note that L does not equal the physical dimension of the gate, but rather the distance between the source and drain regions underneath the gate.
The overlap between the gate and the source/drain region is required to ensure that the inversion layer forms a continuous conducting path between the source and drain region.
Typically this overlap is made as small as possible in order to minimize its parasitic capacitance.

APPLICATION

Power mosfet application
Automotive application
Power supply application
Dc/dc converter
Voltage regulator module
Motor drive application