Can you send full report with ppt of above mentioned project title "Micro controller based high frequency heating for surface hardening" within 12 hours? Please...
High-frequency three-phase inverter circuit that can output at the different frequency by the power metal oxide semiconductor field effect transistor (MOSFET) for induction heating. Induction heating is often used for the heat treatment of a metal workpiece. In the hardening of a gear, since the bottom or tips are heated to a lower frequency or a higher frequency respectively. The proposed circuit can not perform with the IGBT to emit high frequency. The circuit uses the power MOSFET instead of the IGBT. Otherwise, the device has the disadvantages of withstanding voltage and current. However, this problem can be solved by the methods of connecting the switching devices to the series and by using the reducing transformer. A simplified analysis and the results of the simulation are verified experimentally in the prototype module.
High frequency induction heating applies the theory of electromagnetic induction to the heating of the workpieces and the distribution of the power density within the heated workpieces is conveniently achieved by selecting the frequency of the power source and The correct design of the induction coils. In the past, high frequency power supplies for the application of induction heating above 100kHz have been based on vacuum tube oscillators, which made the equipment have some shortcomings such as low efficiency, high volume, life Cutting and preheating before use.
With advances in high-power semiconductor device technology, research on high-power solid-state high-frequency power supply has made great progress. In the literature, high frequency power supplies have been described with various devices, such as static induction transistors (SIT), isolated gate bipolar transistor (IGBT) and power MOSFET. The IGBT offers low resistance and requires very little power for door actuation, it is widely used in generators with frequencies up to 100 kHz, but the frequency of around 400 kHz is difficult to achieve for the state of the art IGBT. The SIT has the defects like loss of high conduction in comparison with IGBT, complicated manufacturing process, high cost and price that restrict it in its applications. MOSFET has the advantages as a high switching speed, easy to be parallel, so MOSFET is used in the high frequency range (in the range of 100-800 kHz) and high power applications.