11-09-2017, 01:25 PM
3D XPoint is a non-volatile memory (NVM) technology from Intel and Micron Technology; was announced in July 2015 and will be available on the open market in mid-2017. Bit storage is based on a bulk resistance change, along with a stacking cross-grid data access matrix. Initial prices are lower than dynamic random access memory (DRAM), but more so than flash memory.
The development of 3D XPoint began around 2012.Intel and Micron had developed other non-volatile phase change memory (PCM) technologies previously Mark Durcan of Micron said XPoint 3D architecture differs from previous PCM bids and uses chalcogenide materials both for selector and for storage memory cell parts that are faster and more stable than traditional PCM materials like GST.
By the year 2015, the complete details of the technology had not been given by Intel or Micron, although the technology apparently is not based on electrons. 3D XPoint has been declared to use electrical resistance and be addressable bit. Similarities have been observed with resistive random access memory developed by Crossbar Inc., but 3D XPoint uses different storage physics. XPoint 3D developers indicate that it is based on changes in the strength of the bulk material. Intel CEO Brian Krzanich responded to ongoing questions about the XPoint material that switching was based on "bulk material properties" .Intel has stated that 3D XPoint does not use a phase-shift or memristor technology, although this is discussed by independent reviewers.
No other vendor seems to have a Resistive RAM / Phase-Change Memory that shows and compares the performance and resiliency of 3D XPoint.
The individual data cells do not need a transistor, so the packing density will be four times that of DRAM.
The development of 3D XPoint began around 2012.Intel and Micron had developed other non-volatile phase change memory (PCM) technologies previously Mark Durcan of Micron said XPoint 3D architecture differs from previous PCM bids and uses chalcogenide materials both for selector and for storage memory cell parts that are faster and more stable than traditional PCM materials like GST.
By the year 2015, the complete details of the technology had not been given by Intel or Micron, although the technology apparently is not based on electrons. 3D XPoint has been declared to use electrical resistance and be addressable bit. Similarities have been observed with resistive random access memory developed by Crossbar Inc., but 3D XPoint uses different storage physics. XPoint 3D developers indicate that it is based on changes in the strength of the bulk material. Intel CEO Brian Krzanich responded to ongoing questions about the XPoint material that switching was based on "bulk material properties" .Intel has stated that 3D XPoint does not use a phase-shift or memristor technology, although this is discussed by independent reviewers.
No other vendor seems to have a Resistive RAM / Phase-Change Memory that shows and compares the performance and resiliency of 3D XPoint.
The individual data cells do not need a transistor, so the packing density will be four times that of DRAM.