12-04-2012, 12:50 PM
MEMRISTOR
Memresistor.docx (Size: 322.82 KB / Downloads: 40)
WHAT IS MEMRISTOR?
A memristor is a passive two-terminal circuit element in which the resistance is a function of the history of the current through and voltage across the device. Memristor theory was formulated and named by Leon Chua in a 1971 paper.
On April 30, 2008, a team at HP Labs announced the development of a switching memristor based on a thin film of titanium dioxide. It has a regime of operation with an approximately linear charge-resistance relationship as long as the time-integral of the current stays within certain bounds.
Titanium dioxide memristor
It demonstrated thata solid-state device could have the characteristics of a memristor based on the behavior of nanoscale thin films. The device neither uses magnetic flux as the theoretical memristor suggested, nor stores charge as a capacitor does, but instead achieves a resistance dependent on the history of current. Although not cited in HP's initial reports on their TiO2 memristor, the resistance switching characteristics of titanium dioxide was originally described in the 1960s The HP device is composed of a thin (50 nm) titanium dioxide film between two 5 nm thick electrodes, one Ti, the other Pt.
Spin memristive systems Spintronic Memristor
In one of the three, resistance is caused by the spin of electrons in one section of the device pointing in a different direction than those in another section, creating a "domain wall," a boundary between the two states. Electrons flowing into the device have a certain spin, which alters the magnetization state of the device. Changing the magnetization, in turn, moves the domain wall and changes the device's resistance.
Manganite memristive systems
Although not described using the word "memristor", a study was done of bilayer oxide films based on manganite for non-volatile memory by researchers. ome of the graphs indicate a tunable resistance based on the number of applied voltage pulses similar to the effects found in the titanium dioxide memristor materials described in the Nature paper "The missing memristor found".
APPLICATIONS
Non-volatile memory applications: Memristors can retain memory states, and data, in power-off modes. Non-volatile random access memory, or NVRAM, is pretty much the first to-market memristor application we’ll be seeing. There are already 3nm Memristors in fabrication now. Crossbar latch memory (see below) developed by Hewlett Packard is reportedly currently about one-tenth the speed of DRAM.
CONCLUSION
The impact that the memristor can have on the existing technology is colossal. The other applications that the memristor can be put to are still to be discovered. Work has to be done to explore the dimensions and fields that this new element can affect. This new element has
certainly showed a lot of promise and also has the potential to be another milestone in the path of evolution of technology for the better.
Memresistor.docx (Size: 322.82 KB / Downloads: 40)
WHAT IS MEMRISTOR?
A memristor is a passive two-terminal circuit element in which the resistance is a function of the history of the current through and voltage across the device. Memristor theory was formulated and named by Leon Chua in a 1971 paper.
On April 30, 2008, a team at HP Labs announced the development of a switching memristor based on a thin film of titanium dioxide. It has a regime of operation with an approximately linear charge-resistance relationship as long as the time-integral of the current stays within certain bounds.
Titanium dioxide memristor
It demonstrated thata solid-state device could have the characteristics of a memristor based on the behavior of nanoscale thin films. The device neither uses magnetic flux as the theoretical memristor suggested, nor stores charge as a capacitor does, but instead achieves a resistance dependent on the history of current. Although not cited in HP's initial reports on their TiO2 memristor, the resistance switching characteristics of titanium dioxide was originally described in the 1960s The HP device is composed of a thin (50 nm) titanium dioxide film between two 5 nm thick electrodes, one Ti, the other Pt.
Spin memristive systems Spintronic Memristor
In one of the three, resistance is caused by the spin of electrons in one section of the device pointing in a different direction than those in another section, creating a "domain wall," a boundary between the two states. Electrons flowing into the device have a certain spin, which alters the magnetization state of the device. Changing the magnetization, in turn, moves the domain wall and changes the device's resistance.
Manganite memristive systems
Although not described using the word "memristor", a study was done of bilayer oxide films based on manganite for non-volatile memory by researchers. ome of the graphs indicate a tunable resistance based on the number of applied voltage pulses similar to the effects found in the titanium dioxide memristor materials described in the Nature paper "The missing memristor found".
APPLICATIONS
Non-volatile memory applications: Memristors can retain memory states, and data, in power-off modes. Non-volatile random access memory, or NVRAM, is pretty much the first to-market memristor application we’ll be seeing. There are already 3nm Memristors in fabrication now. Crossbar latch memory (see below) developed by Hewlett Packard is reportedly currently about one-tenth the speed of DRAM.
CONCLUSION
The impact that the memristor can have on the existing technology is colossal. The other applications that the memristor can be put to are still to be discovered. Work has to be done to explore the dimensions and fields that this new element can affect. This new element has
certainly showed a lot of promise and also has the potential to be another milestone in the path of evolution of technology for the better.