02-09-2017, 02:14 PM
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random access memory technologies that offer the same functionality as flash memory.
The advantages of FeRAM over the flash include: lower power consumption, faster write performance and maximum read / write capacity (around 1010 to 1014 cycles). FeRAMs have data retention times of more than 10 years at + 85 ° C (up to many decades at lower temperatures). The disadvantages of the FeRAM market are much lower storage densities than flash devices, limitations of storage capacity and higher cost. FeRAM also has the unusual technical disadvantage of a destructive read process, which requires a write architecture after reading.
The advantages of FeRAM over the flash include: lower power consumption, faster write performance and maximum read / write capacity (around 1010 to 1014 cycles). FeRAMs have data retention times of more than 10 years at + 85 ° C (up to many decades at lower temperatures). The disadvantages of the FeRAM market are much lower storage densities than flash devices, limitations of storage capacity and higher cost. FeRAM also has the unusual technical disadvantage of a destructive read process, which requires a write architecture after reading.