20-10-2012, 12:57 PM
Introduction to CMOS VLSI Design
CMOS VLSI.ppt (Size: 1.34 MB / Downloads: 51)
A Brief History
1958: First integrated circuit
Flip-flop using two transistors
Built by Jack Kilby at Texas Instruments
2003
Intel Pentium 4 mprocessor (55 million transistors)
512 Mbit DRAM (> 0.5 billion transistors)
53% compound annual growth rate over 45 years
No other technology has grown so fast so long
Driven by miniaturization of transistors
Smaller is cheaper, faster, lower in power!
Revolutionary effects on society
Invention of the Transistor
Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable
1947: first point contact transistor
John Bardeen and Walter Brattain at Bell Labs
Read Crystal Fire
by Riordan, Hoddeson
Transistor Types
Bipolar transistors
npn or pnp silicon structure
Small current into very thin base layer controls large currents between emitter and collector
Base currents limit integration density
Metal Oxide Semiconductor Field Effect Transistors
nMOS and pMOS MOSFETS
Voltage applied to insulated gate controls current between source and drain
Low power allows very high integration
Signal Strength
Strength of signal
How close it approximates ideal voltage source
VDD and GND rails are strongest 1 and 0
nMOS pass strong 0
But degraded or weak 1
pMOS pass strong 1
But degraded or weak 0
Thus nMOS are best for pull-down network
Gate Layout
Layout can be very time consuming
Design gates to fit together nicely
Build a library of standard cells
Standard cell design methodology
VDD and GND should abut (standard height)
Adjacent gates should satisfy design rules
nMOS at bottom and pMOS at top
All gates include well and substrate contacts
CMOS VLSI.ppt (Size: 1.34 MB / Downloads: 51)
A Brief History
1958: First integrated circuit
Flip-flop using two transistors
Built by Jack Kilby at Texas Instruments
2003
Intel Pentium 4 mprocessor (55 million transistors)
512 Mbit DRAM (> 0.5 billion transistors)
53% compound annual growth rate over 45 years
No other technology has grown so fast so long
Driven by miniaturization of transistors
Smaller is cheaper, faster, lower in power!
Revolutionary effects on society
Invention of the Transistor
Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable
1947: first point contact transistor
John Bardeen and Walter Brattain at Bell Labs
Read Crystal Fire
by Riordan, Hoddeson
Transistor Types
Bipolar transistors
npn or pnp silicon structure
Small current into very thin base layer controls large currents between emitter and collector
Base currents limit integration density
Metal Oxide Semiconductor Field Effect Transistors
nMOS and pMOS MOSFETS
Voltage applied to insulated gate controls current between source and drain
Low power allows very high integration
Signal Strength
Strength of signal
How close it approximates ideal voltage source
VDD and GND rails are strongest 1 and 0
nMOS pass strong 0
But degraded or weak 1
pMOS pass strong 1
But degraded or weak 0
Thus nMOS are best for pull-down network
Gate Layout
Layout can be very time consuming
Design gates to fit together nicely
Build a library of standard cells
Standard cell design methodology
VDD and GND should abut (standard height)
Adjacent gates should satisfy design rules
nMOS at bottom and pMOS at top
All gates include well and substrate contacts