31-08-2017, 10:29 AM
the physics of the device that governs the operation of the industry-standard ETOXTM flash memory cell and shows how it is ideal for storing multiple bits per cell, through its electron storage in an electrically insulated floating door and through its direct access to the memory cell. The physical aspects of the device and the reliability of the three key characteristics of multi-level (M.L.C.) technology are discussed: accurate load placement, accurate load sensing and accurate load retention. The implementation of mixed signal design of these characteristics is reviewed along with the challenges for the performance of standard flash memory products and low peripheral circuit overhead. Finally, we review the manufacturing aspects of the process and show how the Intel StrataFlashTM memory is manufactured in the same process flow and in the same high performance as the standard flash memory.
StrataFlash is a NOR flash memory technology first developed by Intel. It stores two or more information bits per cell instead of just one, in an architecture called a multi-level cell (MLC). This is achieved by storing intermediate voltage levels instead of using only the two levels (unloaded = "0" and loaded = "1") of traditional binary memories. StrataFlash technology evolved from Intel's ETOX flash memory products. Two bits per cell are achieved with four voltage levels, while three bits per cell can be achieved with eight levels.
Research of this technology began in 1992 and the first commercial products were launched in 1997. Additional developments allowed for faster read speeds by offering synchronous burst mode and asynchronous page mode reading operations.
StrataFlash is a NOR flash memory technology first developed by Intel. It stores two or more information bits per cell instead of just one, in an architecture called a multi-level cell (MLC). This is achieved by storing intermediate voltage levels instead of using only the two levels (unloaded = "0" and loaded = "1") of traditional binary memories. StrataFlash technology evolved from Intel's ETOX flash memory products. Two bits per cell are achieved with four voltage levels, while three bits per cell can be achieved with eight levels.
Research of this technology began in 1992 and the first commercial products were launched in 1997. Additional developments allowed for faster read speeds by offering synchronous burst mode and asynchronous page mode reading operations.