29-05-2013, 01:02 PM
Enhancement Mode MOSFET Circuits
Enhancement Mode.pdf (Size: 116.57 KB / Downloads: 147)
Abstract
By configuring one or more of the devices on a 4007 chip, the basic
electrical properties of enhancement mode MOSFET devices and circuits
are observed and investigated. The following circuits are constructed and
analyzed: NMOS common-source amplifier stages with active loads (viz., a
diode-connected NMOSFET and a PMOS current mirror); a CMOS
inverter gate; and a CMOS transmission gate.
Component Familiarization and Identification
The CD4007M/CD4007C consists of three complementary pairs of N- and
P-channel enhancement mode MOS transistors suitable for series/shunt
applications. All inputs are protected from static discharge by diode clamps
to VDD and VSS. For proper operation the voltages at all pins must be
constrained to be between VSS - 0.3V and VDD + 0.3V at all times. Note:
All P-channel substrates are connected to VDD and all N-channel
substrates are connected to VSS. Like all MOS devices, this chip is
electrically fragile. Avoid handling it any more than necessary.