13-02-2013, 02:54 PM
DIODE CHARACTERISTICS
DIODE CHARACTERISTICS.docx (Size: 94.72 KB / Downloads: 37)
Aim:
To experimentally obtain V-I characteristics of Silicon diode (IN4001) and Germanium diode (0A85) and determine, from the observations, various device parameters namely: Static Resistance, Dynamic Resistance, Cut-in Voltage, Reverse Saturation Current.
Selection of components and equipment ranges: -
• Note relevant manufacturer specifications of the device from data sheet. Relevant specifications are Maximum forward current, Cutin voltage, Maximum reverse voltage. Identify the terminals of the diode from the diagram given in data sheet.
• Select range of variation of Vs. i.e. Vsmin, Vsmax
• Criteria to select R should be to limit the forward current in the circuit to be less than their maximum ratings. Find the value & wattage of the resistance.
One may use the relation:
Where IF, max is less than maximum forward current allowed by the manufacturer.
• *Resistor R is connected in the reverse biased circuit to limit the current and protect the diode in case the power supply terminals are connected in a way which forward biases the diode. If care is taken in connecting the supply terminals correctly then R can be avoided.
• Select the appropriate range of ammeters and voltmeters
• Choose the component values close to the nearest standard values available in the laboratory.