08-12-2012, 03:18 PM
Metal Oxide Semiconductor Field Effect Transistor
MOSFET.ppt (Size: 286 KB / Downloads: 165)
Introduction
A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device.
A MOSFET is most commonly used in the field of power electronics.
A semiconductor is made of manufactured material that acts neither like a insulator nor a conductor.
Working principle of MOSFET
A metal–oxide–semiconductor field-effect transistor (MOSFET) is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer which in the case of a MOSFET is an oxide, such as silicon dioxide.
If dielectrics other than an oxide such as silicon dioxide (often referred to as oxide) are employed the device may be referred to as a metal–insulator–semiconductor FET (MISFET).
Compared to the MOS capacitor, the MOSFET includes two additional terminals (source and drain), each connected to individual highly doped regions that are separated by the body region.
N and P channel of MOSFET
If the MOSFET is an n-channel or nMOS FET, then the source and drain are 'n+' regions and the body is a 'p' region.
If the MOSFET is a p-channel or pMOS FET, then the source and drain are 'p+' regions and the body is a 'n' region.