23-02-2013, 04:28 PM
STT RAM WITH 1T-MTJ MEMORY CELL
STT RAM WITH.pptx (Size: 1.72 MB / Downloads: 24)
Tunnel Magnetoresistance
Fe/MgO/Fe junctions reach over 200% decrease in electrical resistance at room temperature
Giant Magnetoresistance
Two thin films of altering ferromagnetic materials and a non-magnetic layer-spacer.
3D Magnetic Core RAM
By the early 1960’s, Magnetic Core RAM became largely universal as main memory, replacing drum memory
Conclusion
Interest in spintronic arises, in part, from the looming problem of exhausting the fundamental physical limits of conventional electronics.
However, complete reconstruction of industry is unlikely and spintronic is a “variation” of current technology
The spin of the electron has attracted renewed interest because it promises a wide variety of new devices that combine logic, storage and sensor applications.
Moreover, these "spintronic" devices might lead to quantum computers and quantum communication based on electronic solid-state devices, thus changing the perspective of information technology in the 21st century.