20-07-2012, 04:45 PM
TCAD SIMULATION STUDY OF FINFET BASED LNA
TCAD SIMULATION STUDY.pdf (Size: 338.5 KB / Downloads: 38)
INTRODUCTION
Scaling of device dimensions has been the
primary factor driving improvements in
integrated circuit performance and cost,
which have led to the rapid growth of the
semiconductor industry. Scaling of CMOS
technology not only promises gigabit
integration, gigahertz clock rate and systems
on a chip, but also arouses great
expectations for CMOS RF circuits in
gigahertz range [1].
SIMULATOR AND SIMULATION METHODOOGY
Sentaurus TCAD simulator from Synopsys
is used to perform all the simulations. This
simulator has many modules and the
following are used in this study.
• Sentaurus structure editor (SDE): To
create the device structure, to define
doping, to define contacts, and to
generate mesh for device simulation
• Sentaurus device simulator
(SDEVICE): To perform all DC, AC
and noise simulations
Simulation Methodology
The LNA circuit used in this study is shown
in Fig. 3. Generally, a common source LNA
is used with a source degeneration inductor
to get the impedance match, especially to get
the real part of input impedance. But, this
circuit does not use any source inductor.
RESULTS AND DISCUSSION
Change in Lun causes the variation in LNA
performance metrics such as gain and noise
figure. But varying Lun also affects Vth, Ion,
and Ioff of the devices. In order to have fair
comparison between different Lun devices,
Vth is maintained constant.