21-03-2012, 02:35 PM
Ovonic unified memory
ovonicunifiedmemoryppt-3.pptx (Size: 396.39 KB / Downloads: 47)
Introduction
Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers.
Current memory technologies have a lot of limitations
One of the fundamental approaches to manage challenge is using new materials to build the next generation transistors.
The new memory technologies have got all the good attributes for an ideal memory.
PRESENT MEMORY TECHNOLOGY SCENARIO
Many new memory technologies were introduced when it is understood that semiconductor memory technology has to be replaced, or updated by its successor since scaling with semiconductor memory reached its material limit.
So, next generation memories are trying tradeoffs between size and cost.
These make them good possibilities for development.
Emerging memories
Next Generation Memories”
The fundamental idea of all these technologies is the bistable nature possible for of the selected material.
OUM – Ovonic unified memory
Resistive heating is used to change the phase of the chalcogenide material.
Amorphous State - by taking temp above melting point.
Polycrystalline State - holding temp at a lower temp for slightly longer period of time.(Tx)
The time needed to program either state is = 400ns
ovonicunifiedmemoryppt-3.pptx (Size: 396.39 KB / Downloads: 47)
Introduction
Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers.
Current memory technologies have a lot of limitations
One of the fundamental approaches to manage challenge is using new materials to build the next generation transistors.
The new memory technologies have got all the good attributes for an ideal memory.
PRESENT MEMORY TECHNOLOGY SCENARIO
Many new memory technologies were introduced when it is understood that semiconductor memory technology has to be replaced, or updated by its successor since scaling with semiconductor memory reached its material limit.
So, next generation memories are trying tradeoffs between size and cost.
These make them good possibilities for development.
Emerging memories
Next Generation Memories”
The fundamental idea of all these technologies is the bistable nature possible for of the selected material.
OUM – Ovonic unified memory
Resistive heating is used to change the phase of the chalcogenide material.
Amorphous State - by taking temp above melting point.
Polycrystalline State - holding temp at a lower temp for slightly longer period of time.(Tx)
The time needed to program either state is = 400ns