31-08-2017, 01:40 PM
The programmable metallization cell, or PMC, is a non-volatile computer memory developed at Arizona State University. PMC is a technology developed to replace the widely used flash memory, providing a combination of longer lives, lower power and better memory density. Infineon Technologies, which licensed the technology in 2004, refers to it as driver-bridge RAM, or CBRAM. CBRAM became a registered trademark of Adesto Technologies in 2011. NEC has a variant called "Nanobridge" and Sony calls its version "electrolytic memory".
PMC is a two-terminal resistive memory technology developed at Arizona State University. PMC is an electrochemical metallization memory that relies on redox reactions to form and dissolve a conductive filament. The state of the device is determined by the resistance across the two terminals. The existence of a filament between the terminals produces a low resistance state (LRS) while the absence of a filament results in a high resistance state (HRS). A PMC device is made of two solid metal electrodes, one relatively inert (eg, tungsten or nickel) and the other electro-chemically active (eg silver or copper), with a thin film of solid electrolyte between them.
PMC is a two-terminal resistive memory technology developed at Arizona State University. PMC is an electrochemical metallization memory that relies on redox reactions to form and dissolve a conductive filament. The state of the device is determined by the resistance across the two terminals. The existence of a filament between the terminals produces a low resistance state (LRS) while the absence of a filament results in a high resistance state (HRS). A PMC device is made of two solid metal electrodes, one relatively inert (eg, tungsten or nickel) and the other electro-chemically active (eg silver or copper), with a thin film of solid electrolyte between them.