21-07-2011, 12:25 PM
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SIMOX
Separation by the IMplantation of OXygen
Silicon bulk wafer
O2 implant
High dose (1018 /cm2), high energy (> 150KeV) implant required
High temperature anneal to react Si and O and remove implant damage
Very low wafer throughput (20 to 40 wafers / day / implanter)
Other SOI specific effects
Fewer processing steps
Better isolation resulting in dense circuits
Lower body effect
Absence of latch-up problem
Better sub-threshold slope
Floating Body Effect – Kink effect, History dependent Vt
Drain current overshoot