21-03-2012, 02:27 PM
OVONIC UNIFIED MEMORY
OUM.pptx (Size: 1.23 MB / Downloads: 56)
Various forms of storage are:
Primary storage
Secondary and off-line storage
Tertiary and database storage
Network storage
Characteristics of storage are:
Volatility of information
Ability to access non-contiguous information
Ability to change information
Classification of the Memory on the bases of Volatility of information is:
Volatile Memory
Non-volatile Memory
Nonvolatile Memory
Protection of data in the event of power loss
Periodic refreshing
Modern Approaches of Nonvolatile Memory
FRAM: Technique used- ferroelectricity
MRAM: Technique used-ferromagnetism
OUM: Technique used- phase changes in the thin-film
3DM: Technique used- multiple layers of active circuitry on the silicon substrate
Phase Change Memory Technology
Describes a class of non-volatile memory devices
Exploits differences in the electrical resistivity of a material in different phases (solid, liquid, gas, condensate and plasma)
Definition:
Phase Change Memory
Changes the state
stores information
excellent solid-state memory properties.
Ovonyx
microelectronics memory technology
developed by Mr. Stanford Ovshinsky
Energy Conversion Devices (ECD) Inc.
Ovonic unified memory –
derived from ''Ovshinsky'' and ''electronic''.
known as phase change memory
OUM allows the rewriting of CD & DVDs .
Attributes of OUM
Non volatile in nature
High density ensures large storage of data within a small area
Non destructive read:-ensures that the data is not corrupted during a read cycle.
Uses very low voltage and power from a single source.
Write/erase cycles of 10e12 are demonstrated
Poly crystalline
This technology offers the potential of easy addition of non volatile memory to a standard cmos process.
This is a highly scalable memory
OUM.pptx (Size: 1.23 MB / Downloads: 56)
Various forms of storage are:
Primary storage
Secondary and off-line storage
Tertiary and database storage
Network storage
Characteristics of storage are:
Volatility of information
Ability to access non-contiguous information
Ability to change information
Classification of the Memory on the bases of Volatility of information is:
Volatile Memory
Non-volatile Memory
Nonvolatile Memory
Protection of data in the event of power loss
Periodic refreshing
Modern Approaches of Nonvolatile Memory
FRAM: Technique used- ferroelectricity
MRAM: Technique used-ferromagnetism
OUM: Technique used- phase changes in the thin-film
3DM: Technique used- multiple layers of active circuitry on the silicon substrate
Phase Change Memory Technology
Describes a class of non-volatile memory devices
Exploits differences in the electrical resistivity of a material in different phases (solid, liquid, gas, condensate and plasma)
Definition:
Phase Change Memory
Changes the state
stores information
excellent solid-state memory properties.
Ovonyx
microelectronics memory technology
developed by Mr. Stanford Ovshinsky
Energy Conversion Devices (ECD) Inc.
Ovonic unified memory –
derived from ''Ovshinsky'' and ''electronic''.
known as phase change memory
OUM allows the rewriting of CD & DVDs .
Attributes of OUM
Non volatile in nature
High density ensures large storage of data within a small area
Non destructive read:-ensures that the data is not corrupted during a read cycle.
Uses very low voltage and power from a single source.
Write/erase cycles of 10e12 are demonstrated
Poly crystalline
This technology offers the potential of easy addition of non volatile memory to a standard cmos process.
This is a highly scalable memory